Power device and electrical appliance

ABSTRACT

A power device and an electrical appliance are provided. The power device has a control input terminal, a first driving circuit and a second driving circuit. When the control input terminal is connected to a high level or a low level, the first driving circuit and the second driving circuit output a high/low level signal in a first voltage range or a high/low level signal in a second voltage range. The first voltage range is different from the second voltage range.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of PCTInternational Application No. PCT/CN2019/110973, filed on Oct. 14, 2019,which claims priority from and the benefit of Chinese Patent ApplicationNo. 201910208662.0 filed with the China National Intellectual PropertyAdministration on Mar. 19, 2019, the entire content of which isincorporated herein by reference for all purposes. No new matter hasbeen introduced.

FIELD

This present disclosure relates to the technical field of electricalappliance, in particular to a power device and an electrical appliancehaving the power device.

BACKGROUND

Intelligent Power Module (IPM) is a power driving product (i.e., a powerdevice) that combines power electronics and integrated circuittechnology. The intelligent power module integrates power switch devices(such as, a gallium nitride (GaN) device or a silicon (Si) device) andhigh-voltage integrated circuit (HVIC) tubes, and has built-in faultdetection circuits for overvoltage, overcurrent, overheating or thelike. However, GaN devices and Si devices have different thresholdvoltages. Generally, the threshold voltage of a GaN device is lower thanthat of a Si device. When the GaN device and the Si device are driven bya same high-voltage integrated circuit tube, if a high voltage issupplied to the high-voltage integrated circuit tube to ensure thenormal operation of the Si device, the high voltage would break down thegate of the GaN device; and if a low voltage is supplied to thehigh-voltage integrated circuit tube to ensure the normal operation ofthe GaN device, the power consumption of the entire Si intelligent powermodule would be increased, which can cause the malfunction of the Sidevice.

SUMMARY

The present disclosure and embodiments thereof provide a power deviceand an electrical appliance having the same.

According to an aspect of the present disclosure, a power device isprovided. The power device includes a control input terminal, an upperbridge arm switch tube and a lower bridge arm switch tube, an upperresistor group and a lower resistor group, a first driving circuit and asecond driving circuit. The first driving circuit is connected to thecontrol input terminal and connected to the upper bridge arm switch tubethrough the upper resistor group. The second driving circuit isconnected to the control input terminal and connected to the lowerbridge arm switch tube through the lower resistor group. The controlinput terminal is connectable to a high level or a low level. When thecontrol input terminal is connected with the high level, the firstdriving circuit and the second driving circuit output a high/low levelsignal in a first voltage range. When the control input terminal isconnected with the low level, the first driving circuit and the seconddriving circuit output a high/low level signal in a second voltagerange. The first voltage range is different from the second voltagerange.

According to another aspect of the present disclosure, an electricalappliance is provided. The electrical appliance includes a power deviceand a processor. The processor is connected to the power device. Thepower device comprises a control input terminal, an upper bridge armswitch tube and a lower bridge arm switch tube, an upper resistor groupand a lower resistor group, a first driving circuit and a second drivingcircuit. The first driving circuit is connected to the control inputterminal and connected to the upper bridge arm switch tube through theupper resistor group. The second driving circuit is connected to thecontrol input terminal and connected to the lower bridge arm switch tubethrough the lower resistor group. The control input terminal isconnectable to a high level or a low level. When the control inputterminal is connected with the high level, the first driving circuit andthe second driving circuit output a high/low level signal in a firstvoltage range. When the control input terminal is connected with the lowlevel, the first driving circuit and the second driving circuit output ahigh/low level signal in a second voltage range. The first voltage rangeis different from the second voltage range.

The power device and electrical appliance in certain embodiments of thepresent disclosure control the control input terminal of thehigh-voltage integrated circuit tube to be connected with a high levelor a low level. When the control input terminal is connected with a highlevel, the first driving circuit and the second driving circuit output ahigh/low level signal in a first voltage range to ensure that the GaNdevice is fully turned on and that the gate of GaN device is not brokendown. When the control input terminal is connected with a low level, thefirst driving circuit and the second driving circuit output a high/lowlevel signal in a second voltage range different from the first voltagerange to ensure that the Si device is fully turned on. Thereby, theadaptability of the GaN intelligent power module and the Si intelligentpower module is improved, which ensures that the functions of the GaNand Si intelligent power modules can be executed.

In order to better understand the above technical solutions, thetechnical solutions are described in detail below in conjunction withthe accompanying drawings of specification and specific embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the circuit structure of a power deviceaccording to an embodiment of the present disclosure;

FIG. 2 is a schematic diagram showing the structure of an upper bridgearm switch tube and a lower bridge arm switch tube according to anembodiment of the present disclosure;

FIG. 3 is a schematic diagram showing the structure of an upper bridgearm switch tube and a lower bridge arm switch tube according to anotherembodiment of the present disclosure;

FIG. 4 is a schematic diagram showing the structure of an upper bridgearm switch tube and a lower bridge arm switch tube according to anotherembodiment of the present disclosure;

FIG. 5 is a schematic diagram showing the structure of an upper bridgearm switch tube and a lower bridge arm switch tube according to afurther embodiment of the present disclosure;

FIG. 6 is a schematic diagram showing the structure of an upper bridgearm switch tube and a lower bridge arm switch tube according to a stillfurther embodiment of the present disclosure;

FIG. 7 is a schematic diagram of the modules of a power device accordingto an embodiment of the present disclosure;

FIG. 8 is a diagram showing the circuit structure of a power deviceaccording to an embodiment of the present disclosure, in which a controlinput terminal SS is connected to a power supply through a bonding wire;

FIG. 9 is a schematic diagram showing a power device according to anembodiment of the present disclosure, in which a control input terminalSS is connected to a power supply through a bonding wire;

FIG. 10 is a diagram showing the circuit structure of a power deviceaccording to an embodiment of the present disclosure, in which a controlinput terminal SS is connected to ground through a bonding wire;

FIG. 11 is a schematic diagram showing a power device according to anembodiment of the present disclosure, in which a control input terminalSS is connected to ground through a bonding wire;

FIG. 12 is a schematic diagram of a UH driving circuit according to anembodiment of the present disclosure;

FIG. 13 is a schematic diagram of a VH driving circuit according to anembodiment of the present disclosure;

FIG. 14 is a schematic diagram of a WH driving circuit according to anembodiment of the present disclosure;

FIG. 15 is a schematic diagram of a UL/VL/WL driving circuit accordingto an embodiment of the present disclosure; and

FIG. 16 is a schematic diagram of the modules of an electrical applianceaccording to an embodiment of the present disclosure.

DETAILED DESCRIPTION OF EMBODIMENTS

The embodiments of the present disclosure are described in detail below.Examples of the embodiments are shown in the accompanying drawings, inwhich the same or similar reference numerals indicate the same orsimilar elements or elements with the same or similar functions. Thefollowing embodiments described with reference to the drawings areexemplary and are only used to explain the present disclosure, whichcannot be understood as a limitation to the present disclosure.

In the description of this disclosure, it should be understood that theterms “center”, “length”, “width”, “thickness”, “upper”, “lower”, “top”,“inside”, “outside” or the like indicate the orientation or positionalrelationship are based on the orientation or positional relationshipshown in the drawings, which is only for the convenience of descriptionand simplifying the description, and does not indicate or imply that thedevice or element referred to have to have a specific orientation, or beconstructed and operated in a specific orientation, therefore theycannot be understood as a limitation of this disclosure. In addition,the terms “first” and “second” are only used for descriptive purposes,and cannot be understood as indicating or implying relative importanceor implicitly indicating the number of indicated technical features.Therefore, the features defined with “first” and “second” may explicitlyor implicitly include one or more of the features.

The following disclosure provides many different embodiments or examplesfor realizing different structures of the present application. In orderto simplify the disclosure of the present application, the componentsand settings of specific examples are described below. Obviously, theyare only examples, and are not intended to limit the presentapplication. In addition, the present application may repeat referencenumerals and/or reference letters in different examples. Such repetitionis for the purpose of simplification and clarity, and does not indicatethe relationship between various embodiments and/or settings discussed.In addition, this application provides examples of various specificprocesses and materials, but those ordinary skilled persons in the artmay recognize the application of other processes and/or other materials.

Referring to FIG. 1 , the present disclosure in certain embodimentsprovides a power device 100, comprising a control input terminal SS, anupper bridge arm switch tube 127 and a lower bridge arm switch tube 128,an upper resistor group 107 and a lower resistor group 108, and a firstdriving circuit 105 and a second driving circuit 106. The first drivingcircuit 105 is connected to the control input terminal SS and connectedto the upper bridge arm switch tube 127 through the upper resistor group107. The second driving circuit 106 is connected to the control inputterminal SS and connected to the lower bridge arm switch tube 128through the lower resistor group 108. The control input terminal SS canbe connected with a high level or a low level. When the control inputterminal SS is connected with the high level, the first driving circuit105 and the second driving circuit 106 output a high/low level signal ina first voltage range, and when the control input terminal SS isconnected with the low level, the first driving circuit 105 and thesecond driving circuit 106 output a high/low level signal in a secondvoltage range. The first voltage range is different from the secondvoltage range.

The power device 100 in certain embodiments of the present disclosurecontrols the control input terminal SS of the high-voltage integratedcircuit (HVIC) tube 111 to be connected with a high level or a lowlevel. When the control input terminal SS is connected with a highlevel, the first driving circuit 105 and the second driving circuit 106output a high/low level signal in a first voltage range to ensure thatthe GaN device is fully turned on and the gate of GaN device is notbroken down. When the control input terminal SS is connected with a lowlevel, the first driving circuit 105 and the second driving circuit 106output a high/low level signal in a second voltage range different fromthe first voltage range to ensure that the Si device is fully turned on.Thereby, the adaptability of the GaN intelligent power module and the Siintelligent power module is improved, which ensures the functions of theGaN and Si intelligent power modules to be executed. In addition, thepower supply voltage of the power device 100 remains unchanged at 15Vand the peripheral circuit does not need to be modified, thus the powerconsumption of the HVIC tube 111 does not substantially increase. A samekind of HVIC tube 111 drives the GaN device and Si device, thereby thereis no risk of mixing HVIC tubes 111 during the production process, whichfacilitates material organization and reduces material costs.

In practice, as the requirements for system energy consumption continueto increase, especially in the air-conditioning industry, the powerconsumption of intelligent power module has become the main source ofpower consumption for variable frequency electronic control of inverterair conditioners. Thus, how to reduce the power consumption ofintelligent power modules has become an important factor for the furtherpromotion and application of intelligent power modules and even inverterair conditioners. For this, the present disclosure proposes a powerdevice 100 with high adaptability, which can improve the adaptability ofGaN intelligent power modules and Si intelligent power modules, thusensuring that the functions of the GaN and Si intelligent power modulesare executed.

In order to better understand the following technical solutions, theexemplary embodiments of the present disclosure are described in moredetail below with reference to the accompanying drawings. Although thedrawings show exemplary embodiments of the present disclosure, it shouldbe understood that the present disclosure can be implemented in variousforms and should not be limited by the embodiments herein. On thecontrary, these embodiments are provided for a more thoroughunderstanding of the present disclosure and to fully convey the scope ofthe present disclosure to those skilled in the art.

Referring to FIG. 1 , the power device in certain embodiments of thepresent disclosure includes a control input terminal SS, an upper bridgearm switch tube 127 and a lower bridge arm switch tube 128, an upperresistor group 107 and a lower resistor group 108, a first drivingcircuit 105 and a second driving circuit 106.

The upper bridge arm switch tube 127 includes a first upper bridge armswitch tube 121, a second upper bridge arm switch tube 122 and a thirdupper bridge arm switch tube 123. The lower bridge arm switch tube 128includes a first lower bridge arm switch tube 124, a second lower bridgearm switch tube 125 and a third lower bridge arm switch tube 126.

The upper resistor group 107 includes a first upper switch resistor, asecond upper switch resistor and a third upper switch resistor. Thefirst upper switch resistor includes a first upper turn-on resistorH-RON1 and a first upper turn-off resistor H-ROFF1. The second upperswitch resistor includes a second upper turn-on resistor H-RON2 and asecond upper turn-off resistor H-ROFF2. The third upper switch resistorincludes a third upper turn-on resistor H-RON3 and a third upperturn-off resistor H-ROFF3. The lower resistor group 108 includes a firstlower switch resistor, a second lower switch resistor and a third lowerswitch resistor. The first lower switch resistor includes a first lowerturn-on resistor L-RON1 and a first lower turn-off resistor L-ROFF1. Thesecond lower switch resistor includes a second lower turn-on resistorL-RON2 and a second lower turn-off resistor L-ROFF2. The third lowerswitch resistor includes a third lower turn-on resistor L-RON3 and athird lower turn-off resistor L-ROFF3.

The first driving circuit 105 includes a UH (a first phase upper)driving circuit 101, a VH (a second phase upper) driving circuit 102 anda WH (a third phase upper) driving circuit 103. The second drivingcircuit 106 includes a UL/VL/WL (lower) driving circuit 104. The controlinput terminal SS is connected to each of the UH driving circuit 101,the VH driving circuit 102, the WH driving circuit 103 and the UL/VL/WLdriving circuit 104. In this embodiment, the UH driving circuit 101, theVH driving circuit 102, the WH driving circuit 103 and the UL/VL/WLdriving circuit 104 can be driving circuits inside the electricalappliance 1000, for example, a three-phase driving circuit for acompressor of an air conditioner. The UH driving circuit 101 isconnected to the UL driving circuit 104, the VH driving circuit 102 isconnected to the VL driving circuit 104, and the WH driving circuit 103is connected to the WL driving circuit 104.

The UH driving circuit 101 is connected to and configured to drive thefirst upper bridge arm switch tube 121 through the first upper switchresistor, in which the first upper turn-on resistor H-RON1 and the firstupper turn-off resistor H-ROFF1 in the first upper switch resistor areconnected in parallel. The VH driving circuit 102 is connected to andconfigured to drive the second upper bridge arm switch tube 122 throughthe second upper switch resistor, in which the second upper turn-onresistor H-RON2 and the second upper turn-off resistor H-ROFF2 in thesecond upper switch resistor are connected in parallel. The WH drivingcircuit 103 is connected to and configured to drive the third upperbridge arm switch tube 123 through the third upper switch resistor, inwhich the third upper turn-on resistor H-RON3 and the third upperturn-off resistor H-ROFF3 in the third upper switch resistor areconnected in parallel.

The UL/VL/WL driving circuit 104 is connected to and configured to drivethe first lower bridge arm switch tube 124 through the first lowerswitch resistor, in which the first lower turn-on resistor L-RON1 andthe first lower turn-off resistor L-ROFF1 in the first lower switchresistor are connected in parallel. The UL/VL/WL driving circuit 104 isconnected to and configured to drive the second lower bridge arm switchtube 125 through the second lower switch resistor, in which the secondlower turn-on resistor L-RON2 and the second lower turn-off resistorL-ROFF2 in the second lower switch resistor are connected in parallel.The UL/VL/WL driving circuit 104 is connected to and configured to drivethe third lower bridge arm switch tube 126 through the third lowerswitch resistor, in which the third lower turn-on resistor L-RON3 andthe third lower turn-off resistor L-ROFF3 in the third lower switchresistor are connected in parallel.

The UH driving circuit 101, the VH driving circuit 102, the WH drivingcircuit 103 and the UL/VL/WL driving circuit 104 are integrated insidethe HVIC tube 111. The VCC terminal of the HVIC tube 111 is configuredto serve as a VDD positive terminal of a low-voltage power supply of thepower device 100, and a voltage of the power supply at the VDD terminalis 15V. The control input terminal SS of the HVIC tube 111 is configuredto serve as the SSS terminal of the power device 100. The VCC terminalis connected to a positive terminal of the power supply of the UHdriving circuit 101, the VH driving circuit 102, the WH driving circuit103 and the UL/VL/WL driving circuit 104 inside the HVIC tube 111.

The HIN1 terminal of the HVIC tube 111 is configured to serve as theinput terminal UHIN of the U-phase upper bridge arm of the power device100 and is connected to the input terminal of the UH driving circuit 101inside the HVIC tube 111. The HIN2 terminal of the HVIC tube 111 isconfigured to serve as the input terminal VHIN of the V-phase upperbridge arm of the power device 100 and is connected to the inputterminal of the VH driving circuit 102 inside the HVIC tube 111. TheHIN3 terminal of the HVIC tube 111 is configured to serve as the inputterminal WHIN of the W-phase upper bridge arm of the power device 100and is connected to the input terminal of the WH driving circuit 103inside the HVIC tube 111. The LIN1 terminal of the HVIC tube 111 isconfigured to serve as the input terminal ULIN of the U-phase lowerbridge arm of the power device 100 and is connected to the first inputterminal of the UL/VL/WL driving circuit 104 inside the HVIC tube 111.The LIN2 terminal of the HVIC tube 111 is configured to serve as theinput terminal VLIN of the V-phase lower bridge arm of the power device100 and is connected to the second input terminal of the UL/VL/WLdriving circuit 104 inside the HVIC tube 111. The LIN3 terminal of theHVIC tube 111 is configured to serve as the input terminal WLIN of theW-phase lower bridge arm of the power device 100 and is connected to thethird input terminal of the UL/VL/WL driving circuit 104 inside the HVICtube 111.

The six input terminals of the U-phase, V-phase and W-phase of the powerdevice 100 receive an input signal at 0V or 5V. The GND terminal of theHVIC tube 111 is configured to serve as a negative terminal COM of thelow-voltage power supply of the power device 100, and is connected to anegative terminal of the power supply of the UH driving circuit 101, theVH driving circuit 102, the WH driving circuit 103 and the UL/VL/WLdriving circuit 104.

The VB1 terminal of the HVIC tube 111 is connected to a positiveterminal of a high-voltage power supply of the UH driving circuit 101inside the HVIC tube 111, and the VB1 terminal of the HVIC tube 111 isconnected to one end of the capacitor 131 and is configured to serve asa positive terminal UVB of U-phase high-voltage power supply of thepower device 100 outside the HVIC tube 111.

The P-HO1 terminal and the N-HO1 terminal of the HVIC tube 111 areconnected to the output terminal of the UH driving circuit 101 insidethe HVIC tube 111, and the P-HO1 terminal and the N-HO1 terminal arerespectively connected to the first upper turn-on resistor H-RON1 andthe first upper turn-off resistor H-ROFF1 outside the HVIC tube 111. Thefirst upper turn-on resistor H-RON1 and the first upper turn-offresistor H-ROFF1 are converged at the other end to be connected to thecontrol electrode of the U-phase upper bridge arm switch tube (firstupper bridge arm switch tube 121).

The VS1 terminal of the HVIC tube 111 is connected to a negativeterminal of a high-voltage power supply of the UH driving circuit 101inside the HVIC tube 111, and the VS1 terminal of the HVIC tube 111 isconnected to an output negative electrode of the U-phase upper bridgearm switch tube (first upper bridge arm switch tube 121), an outputpositive electrode of the U-phase lower bridge arm switch tube (firstlower bridge arm switch tube 124) and the other end of the capacitor131, and is configured to serve as a negative terminal UVS of U-phasehigh-voltage power supply of the power device 100 outside the HVIC tube111.

The VB2 terminal of the HVIC tube 111 is connected to a positiveterminal of a high-voltage power supply of the VH driving circuit 102inside the HVIC tube 111, and the VB2 terminal of the HVIC tube 111 isconnected to one end of the capacitor 132 and is configured to serve asa positive terminal VVB of U-phase high-voltage power supply of thepower device 100 outside the HVIC tube 111.

The P-HO2 terminal and N-HO2 terminal of the HVIC tube 111 are connectedto the output terminal of the VH driving circuit 102 inside the HVICtube 111, and the P-HO2 terminal and the N-HO2 terminal are respectivelyconnected to the second upper turn-on resistor H-RON2 and the secondupper turn-off resistor H-ROFF2 outside the HVIC tube 111. The secondupper turn-on resistor H-RON2 and the second upper turn-off resistorH-ROFF2 are converged at the other end to be connected to the controlelectrode of the V-phase upper bridge arm switch tube (second upperbridge arm switch tube 122).

The VS2 terminal of the HVIC tube 111 is connected to a negativeterminal of a high-voltage power supply of the VH driving circuit 102inside the HVIC tube 111, and the VS2 terminal of the HVIC tube 111 isconnected to an output negative electrode of the V-phase upper bridgearm switch tube (second upper bridge arm switch tube 122), an outputpositive electrode of the V-phase lower bridge arm switch tube (secondlower bridge arm switch tube 125) and the other end of the capacitor132, and is configured to serve as a negative terminal VVS of V-phasehigh-voltage power supply of the power device 100 outside the HVIC tube111.

The VB3 terminal of the HVIC tube 111 is connected to a positiveterminal of a high-voltage power supply of the WH driving circuit 103inside the HVIC tube 111, and the VB3 terminal of the HVIC tube 111 isconnected to one end of the capacitor 133 and is configured to serve asa positive terminal WVB of W-phase high-voltage power supply of thepower device 100 outside the HVIC tube 111.

The P-HO3 terminal and N-HO3 terminal of the HVIC tube 111 are connectedto the output terminal of the WH driving circuit 103 inside the HVICtube 111, and the P-HO3 terminal and the N-HO3 terminal are respectivelyconnected to the third upper turn-on resistor H-RON3 and the third upperturn-off resistor H-ROFF3 outside the HVIC tube 111. The third upperturn-on resistor H-RON3 and the third upper turn-off resistor H-ROFF3are converged at the other end to be connected to the control electrodeof the W-phase upper bridge arm switch tube (third upper bridge armswitch tube 123).

The VS3 terminal of the HVIC tube 111 is connected to a negativeterminal of a high-voltage power supply of the WH driving circuit 103inside the HVIC tube 111, and the VS3 terminal of the HVIC tube 111 isconnected to an output negative electrode of the W-phase upper bridgearm switch tube (third upper bridge arm switch tube 123), an outputpositive electrode of the W-phase lower bridge arm switch tube (thirdlower bridge arm switch tube 126) and the other end of the capacitor133, and is configured to serve as a negative terminal WVS of W-phasehigh-voltage power supply of the power device 100 outside the HVIC tube111.

The P-LO1 terminal and N-LO1 terminal of the HVIC tube 111 arerespectively connected to the first lower turn-on resistor L-RON1 andthe first lower turn-off resistor L-ROFF1, and the first lower turn-onresistor L-RON1 and the first lower turn-off resistor L-ROFF1 areconverged at the other end to be connected to the control electrode ofthe U-phase lower bridge arm switch tube (the first lower bridge armswitch tube 124).

The P-LO2 terminal and N-LO2 terminal of the HVIC tube 111 arerespectively connected to the second lower turn-on resistor L-RON2 andthe second lower turn-off resistor L-ROFF2, and the second lower turn-onresistor L-RON2 and the second lower turn-off resistor L-ROFF2 areconverged at the other end to be connected to the control electrode ofthe V-phase lower bridge arm switch tube (the second lower bridge armswitch tube 125).

The P-LO3 terminal and N-LO3 terminal of the HVIC tube 111 arerespectively connected to the third lower turn-on resistor L-RON3 andthe third lower turn-off resistor L-ROFF3, and the third lower turn-onresistor L-RON3 and the third lower turn-off resistor L-ROFF3 areconverged at the other end to be connected to the control electrode ofthe W-phase lower bridge arm switch tube (the third lower bridge armswitch tube 126).

The output negative electrode of the U-phase lower bridge arm switchtube (the first lower bridge arm switch tube 124) is configured to serveas a reference terminal UN of U-phase low voltage of the power device100. The output negative electrode of the V-phase lower bridge armswitch tube (the second lower bridge arm switch tube 125) is configuredto serve as a reference terminal VN of V-phase low voltage of the powerdevice 100. The output negative electrode of the W-phase lower bridgearm switch tube (the third lower bridge arm switch tube 126) isconfigured to serve as a reference terminal WN of W-phase low voltage ofthe power device 100.

An output positive electrode of the U-phase upper bridge arm switch tube(the first upper bridge arm switch tube 121), an output positiveelectrode of the V-phase upper bridge arm switch tube (the second upperbridge arm switch tube 122) and an output positive electrode of theW-phase upper bridge arm switch tube (the third upper bridge arm switchtube 123) are connected and serve as a high-voltage input terminal P ofthe power device 100, in which the terminal P is connected with 300V.

In certain embodiments of the present disclosure, the upper bridge armswitch tube (the first upper bridge arm switch tube 121, the secondupper bridge arm switch tube 122 and the third upper bridge arm switchtube 123) and the lower bridge arm switch tube (the first lower bridgearm switch tube 124, the second lower bridge arm switch tube 125 and thethird lower bridge arm switch tube 126) can be a combination of an IGBTtube (Si device) and an FRD tube in parallel, or a combination of anIGBT tube and a Schottky Barrier Diode (GaN SBD), or ametal-oxide-semiconductor (GaN MOS, GaN device), or a combination of aGaN MOS tube and a Fast Recovery Diode (FRD), or a combination of a GaNMOS tube and a GaN SBD tube, which can be selected according to actualneeds and is not particularly limited.

When the control input terminal SS is connected with a high level, theP-HO1, N-HO1, P-HO2, N-HO2, P-HO3, N-HO3, P-LO1, N-LO1, P-LO2, N-LO2,P-LO3 and N-LO3 output a high/low level signal of 0V to 3V. That is,when the control input terminal SS is connected with a high level, theUH driving circuit 101, the VH driving circuit 102, the WH drivingcircuit 103 and the UL/VL/WL driving circuit 104 output a high/low levelsignal in a first voltage range, in which the first voltage range is inthe range of 0V to 3V.

When the control input terminal SS is connected with a low level, theP-HO1, N-HO1, P-HO2, N-HO2, P-HO3, N-HO3, P-LO1, N-LO1, P-LO2, N-LO2,P-LO3 and N-LO3 output a high/low level signal of 0V to 15V. That is,when the control input terminal SS is connected with a low level, the UHdriving circuit 101, the VH driving circuit 102, the WH driving circuit103 and the UL/VL/WL driving circuit 104 output a high/low level signalin a second voltage range, in which the second voltage range is in therange of 0V to 15V.

According to an embodiment of the present disclosure, the control inputterminal SS is connected with a high level, when the upper bridge armswitch tube (the first upper bridge arm switch tube 121, the secondupper bridge arm switch tube 122 and the third upper bridge arm switchtube 123) and the lower bridge arm switch tube (the first lower bridgearm switch tube 124, the second lower bridge arm switch tube 125 and thethird lower bridge arm switch tube 126) each contain a GaN device (thatis, the upper bridge arm switch tube and the lower bridge arm switchtube each are GaN MOS mode in FIG. 2 , or a combination mode of GaN MOSand Si FRD in FIG. 3 , or a combination mode of GaN MOS and GaN SBD inFIG. 4 ). The control input terminal SS is connected with a low level,when the upper bridge arm switch tube (the first upper bridge arm switchtube 121, the second upper bridge arm switch tube 122 and the thirdupper bridge arm switch tube 123) and the lower bridge arm switch tube(the first lower bridge arm switch tube 124, the second lower bridge armswitch tube 125 and the third lower bridge arm switch tube 126) eachcontain a Si device (that is, the upper bridge arm switch tube and thelower bridge arm switch tube each are a combination mode of Si IGBT andSi FRD in FIG. 5 , or a combination mode of Si IGBT and GaN SBD in FIG.6 ).

Referring to FIGS. 1-7 in combination, the power device 100 furtherincludes a controller 130. When the control input terminal SS is set toa high level, the controller 130 can control the control input terminalSS to be connected with the high level. Similarly, when the controlinput terminal SS is set to a low level, the controller 130 can controlthe control input terminal SS to be connected with the low level. It canbe understood that the controller 130 may include a digital circuit foroutputting a high level or a low level, and may also include aflip-flop, but is not limited thereto. The controller 130 may beinstalled inside the HVIC tube 111, for example, between the controlinput terminal SS and the terminal SSS, or the like. The controller 130may be installed outside the HVIC tube 111, for example, near thecontrol input terminal SS, or the like. The controller 130 may beinstalled on the microprocessor of the electric appliance 1000,referring to FIG. 16 .

In another embodiment, referring to FIGS. 8 to 11 in combination, thepower device 100 further includes a first connecting portion 116 and asecond connecting portion 117. The first connecting portion 116 isconfigured to connect the VCC terminal and the VDD terminal, and thesecond connecting portion 117 is configured to connect the GND terminaland the COM terminal. When the control input terminal SS is set to be ahigh level, the control input terminal SS is connected to the VCCterminal through a bonding wire, referring to FIGS. 8 and 9 . When thecontrol input terminal SS is set to be a low level, the control inputterminal SS is connected to the GND terminal through a bonding wire,referring to FIGS. 10 and 11 .

The power device 100 in certain embodiments of the present disclosurecontrols the control input terminal SS of the HVIC tube 111 to beconnected with a high level or a low level. When the control inputterminal SS is connected with a high level, the first driving circuit105 and the second driving circuit 106 output a high/low level signal ina first voltage range (0V-3V) to ensure that the GaN device is fullyturned on. When the control input terminal SS is connected with a lowlevel, the first driving circuit 105 and the second driving circuit 106output a high/low level signal in a second voltage range (0V-15V) toensure that the Si device is fully turned on and the gate of Si deviceis not broken down. Thereby, the adaptability of the GaN intelligentpower module and the Si intelligent power module is improved, whichensures the functions of the GaN and Si intelligent power modules to beexecuted. Besides, the power supply voltage of the power device 100remains unchanged at 15V and the peripheral circuit does not need to bemodified, thus the power consumption of the HVIC tube 111 does notsubstantially increase. A same kind of HVIC tube 111 drives the GaNdevice and Si device, thus there is no risk of mixing HVIC tubes 111during the production process, which facilitates material organizationand reduces material costs. In addition, turn-on resistors (the firstupper turn-on resistor H-RON1, the second upper turn-on resistor H-RON2,the third upper turn-on resistor H-RON3, the first lower turn-onresistor L-RON1, the second lower turn-on resistor L-RON2 and the thirdlower turn-on resistor L-RON3) and turn-off resistors (the first upperturn-off resistor H-ROFF1, the second upper turn-off resistor H-ROFF2,the third upper turn-off resistor H-ROFF3, the first lower turn-offresistor L-ROFF1, the second lower turn-off resistor L-ROFF2 and thethird lower turn-off resistor L-ROFF3) are adopted in the presentdisclosure, thus output of the driving circuits (UH driving circuit 101,VH driving circuit 102, WH driving circuit 103 and UL/VL/WL drivingcircuit 104) can independently switch on and off the bridge arm switchtubes (the upper bridge arm switch tube 127 and the lower bridge armswitch tube 128), thereby ensuring the reliable switch on and off of theGaN device and Si device, which is important for GaN device with a lowervoltage threshold.

In certain embodiments of the present disclosure, the upper bridge armswitch tube (the first upper bridge arm switch tube 121, the secondupper bridge arm switch tube 122 and the third upper bridge arm switchtube 123) and the lower bridge arm switch tube (the first lower bridgearm switch tube 124, the second lower bridge arm switch tube 125 and thethird lower bridge arm switch tube 126) have same structures. Thus,taking the U-phase upper bridge arm switch tube (first upper bridge armswitch tube 121) as an example, the U-phase upper bridge arm switch tube(first upper bridge arm switch tube 121) may have five forms ofstructure.

Referring to FIG. 2 , the U-phase upper bridge arm switch tube (firstupper bridge arm switch tube 121) may be a GaN MOS mode. A drain of theGaN MOS tube 1211 is configured to serve as an output positive electrodeof the U-phase upper bridge arm switch tube (the first upper bridge armswitch tube 121). A source of the GaN MOS tube 1211 is configured toserve as an output negative electrode of the U-phase upper bridge armswitch tube (the first upper bridge arm switch tube 121). A gate of theGaN MOS tube 1211 is configured to serve as a control electrode of theU-phase upper bridge arm switch tube (the first upper bridge arm switchtube 121).

Referring to FIG. 3 , the U-phase upper bridge arm switch tube (firstupper bridge arm switch tube 121) may be a combination mode of GaN MOSand Si FRD. A drain of the GaN MOS tube 1211 is connected to a cathodeof the Si FRD tube 1212, and is configured to serve as an outputpositive electrode of the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121). A source of the GaN MOS tube1211 is connected to an anode of the Si FRD tube 1212, and is configuredto serve as an output negative electrode of the U-phase upper bridge armswitch tube (the first upper bridge arm switch tube 121). A gate of theGaN MOS tube 1211 is configured to serve as a control electrode of theU-phase upper bridge arm switch tube (the first upper bridge arm switchtube 121).

Referring to FIG. 4 , the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121) may be a combination mode of GaNMOS and GaN SBD. A drain of the GaN MOS tube 1211 is connected to acathode of the GaN SBD tube 1212, and is configured to serve as anoutput positive electrode of the U-phase upper bridge arm switch tube(the first upper bridge arm switch tube 121). A source of the GaN MOStube 1211 is connected to an anode of the GaN SBD tube 1212, and isconfigured to serve as an output negative electrode of the U-phase upperbridge arm switch tube (the first upper bridge arm switch tube 121). Agate of the Si IGBT tube 1211 is configured to serve as a controlelectrode of the U-phase upper bridge arm switch tube (the first upperbridge arm switch tube 121).

Referring to FIG. 5 , the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121) may be a combination mode of SiIGBT and Si FRD. A collector of the Si IGBT tube 1211 is connected to acathode of the Si FRD tube 1212 and is configured to serve as an outputpositive electrode of the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121). An emitter of the Si IGBT tube1211 is connected to an anode of the Si FRD tube 1212 and is configuredto serve as an output negative electrode of the U-phase upper bridge armswitch tube (the first upper bridge arm switch tube 121). A gate of theSi IGBT tube 1211 is configured to serve as a control electrode of theU-phase upper bridge arm switch tube (the first upper bridge arm switchtube 121).

Referring to FIG. 6 , the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121) may be a combination mode of SiIGBT and GaN SBD. A collector of the Si IGBT tube 1211 is connected to acathode of the GaN SBD tube 1212 and is configured to serve as an outputpositive electrode of the U-phase upper bridge arm switch tube (thefirst upper bridge arm switch tube 121). An emitter of the Si IGBT tube1211 is connected to an anode of the GaN SBD tube 1212 and is configuredto serve as an output negative electrode of the U-phase upper bridge armswitch tube (the first upper bridge arm switch tube 121). A gate of theSi IGBT tube 1211 is configured to serve as a control electrode of theU-phase upper bridge arm switch tube (the first upper bridge arm switchtube 121).

It can be understood that the structures of the second upper bridge armswitch tube 122, the third upper bridge arm switch tube 123, the firstlower bridge arm switch tube 124, the second lower bridge arm switchtube 125 and the third lower bridge arm switch tube 126 are referred tothe structure of the first upper bridge arm switch tube 121, which canbe any one of the five forms selected from GaN MOS, a combination of GaNMOS and Si FRD, a combination of GaN MOS and GaN SBD, a combination ofSi IGBT and Si FRD, and a combination of Si IGBT and GaN SBD. Thespecific structure is the same as that of the first upper bridge armswitch tube 121, which is not repeated.

In this embodiment, the structures of the UH driving circuit 101, the VHdriving circuit 102 and the WH driving circuit 103 are identical. The UHdriving circuit 101 is taken as an example for description.

Referring to FIG. 12 , the UH driving circuit 101 inside includes afirst input sub-circuit 1011, a first switch tube 1012, a second switchtube 1013, a third switch tube 1014, and a first voltage outputsub-circuit 1019. The first input sub-circuit 1011 includes a firstoutput terminal, a second output terminal and a third output terminal.The first output terminal is connected to the first switch tube 1012.The second output terminal is connected to the second switch tube 1013.The third output terminal is connected to the third switch tube 1014.

The first voltage output sub-circuit 1019 includes a latch and step-downmodule 1016, a first switching module 1018, a latch module 1015, and afirst output sub-circuit 1017. The latch and step-down module 1016 isconnected to the first switch tube 1012 and the second switch tube 1013.The first switching module 1018 is connected to the latch and step-downmodule 1016 and a power supply respectively. The latch module 1015 isconnected to the third switch tube 1014.

A first input terminal of the latch and step-down module 1016 isconnected to a drain of the first switch tube 1012. A second inputterminal of the latch and step-down module 1016 is connected to a drainof the second switch tube 1013. A first output terminal of the latch andstep-down module 1016 is connected to a selection terminal 1 of thefirst switching module 1018 (for example, an analog switch). A secondoutput terminal of the latch and step-down module 1016 is connected toan input terminal of the first output sub-circuit 1017.

An input terminal of the latch module 1015 is connected to a drain ofthe third switch tube 1014. An output terminal of the latch module 1015is connected to a control terminal of the first switching module 1018.When the input terminal of the latch module 1015 is connected with a lowlevel signal, the output terminal of the latch module 1015 outputs ahigh level. When the input terminal of the latch module 1015 isconnected with a high level signal, the output terminal of the latchmodule 1015 outputs a low level. A fixed terminal of the first switchingmodule 1018 is connected to a positive terminal of the power supply ofthe first output sub-circuit 1017.

When the control input terminal SS is connected with the high level, thefirst output terminal, the second output terminal and the third outputterminal of the first input sub-circuit 1011 output trigger pulses, andthe first switch tube 1012, the second switch tube 1013 and the thirdswitch tube 1014 are each turned on. The first voltage outputsub-circuit 1019 outputs a high/low level signal in the first voltagerange (0V-3V). That is, the latch module 1015 is able to control anaction of the first switching module 1018 to take an output voltage ofthe latch and step-down module 1016 as an output voltage of the firstvoltage output sub-circuit 1019.

The control input terminal SS is connected to the first inputsub-circuit 1011. When the control input terminal SS is at a low level,the first output terminal and the second output terminal of the firstinput sub-circuit 1011 output trigger pulses. The first switch tube 1012and the second switch tube 1013 are turned on, but the third switch tube1014 is turned off. The first voltage output sub-circuit 1019 outputs ahigh/low level signal in the second voltage range (0V-15V). That is, thelatch module 1015 is able to control an action of the first switchingmodule 1018 to take a voltage of the power supply as an output voltageof the first voltage output sub-circuit 1019.

The VCC terminal is connected to a positive terminal of the power supplyof the first input sub-circuit 1011. The HIN1 terminal is connected tothe input terminal of the first input sub-circuit 1011. The controlinput terminal SS is connected to the control terminal of the firstinput sub-circuit 1011. The first output terminal of the first inputsub-circuit 1011 is connected to the gate of the first switch tube 1012(for example, a high-voltage DMOS tube). The second output terminal ofthe first input sub-circuit 1011 is connected to the gate of the secondswitch tube 1013 (for example, a high-voltage DMOS tube). The thirdoutput terminal of the first input sub-circuit 1011 is connected to thegate of the third switch tube 1014 (for example, a high-voltage DMOStube).

The GND terminal is connected to each of the negative terminal of thepower supply of the first input sub-circuit 1011, the substrate andsource of the first switch tube 1012, the substrate and source of thesecond switch tube 1013, and the substrate and source of the thirdswitch tube 1014.

The VB1 is connected to the positive terminal of the power supply of thelatch module 1015, the positive terminal of the power supply of thelatch and step-down module 1016 and the selection terminal 0 of thefirst switching module 1018. The VS1 terminal is connected to each ofthe negative terminal of the power supply of the latch module 1015, thenegative terminal of the power supply of the latch and step-down module1016 and the negative terminal of the power supply of the first outputsub-circuit 1017. The P-HO1 and N-HO1 are connected to the outputterminal of the first output sub-circuit 1017.

The function of the first input sub-circuit 1011 is described asfollows: when the input terminal signal of the first input sub-circuit1011 is at a rising edge, the first output terminal of the first inputsub-circuit 1011 outputs a pulse signal with a pulse width of about 300ns; when the input terminal signal of the first input sub-circuit 1011is at a falling edge, the second output terminal of the first inputsub-circuit 1011 outputs a pulse signal with a pulse width of about 300ns; and when the control input terminal SS of the first inputsub-circuit 1011 is at a high level, the third output terminal of thefirst input sub-circuit 1011 outputs a pulse signal with a pulse widthof about 300 ns.

The function of the latch module 1015 is described as follows: when theinput terminal signal of the latch module 1015 is connected with a lowlevel, the output terminal of the latch module 1015 outputs a highlevel; and when the input terminal signal of the latch module 1015 isconnected with a high level, the output terminal of the latch module1015 outputs a low level.

The function of the latch and step-down module 1016 is described asfollows: when the first input terminal of the latch and step-down module1016 is at a low level, the second output terminal of the latch andstep-down module 1016 continuously outputs a high level; when the secondinput terminal of the latch and step-down module 1016 is at a low level,the second output terminal of the latch and step-down module 1016continuously outputs a low level. That is, the two pulse signalsdecomposed by the HIN1 signal at the two output terminals of the firstinput sub-circuit 1011 are re-integrated into a complete signal, andsince the latch and step-down module 1016 inside includes a step-downcircuit, the second output terminal of the latch and step-down module1016 outputs a voltage of 3V to VS1.

The function of the first output sub-circuit 1017 is described asfollows: the first output sub-circuit 1017 can output a signal whosevoltage value is consistent with the positive terminal of the powersupply when at a high level, and the first output sub-circuit 1017 canoutput a signal whose voltage value is consistent with the negativeterminal of the power supply and whose phase is consistent with that ofthe HIN1 terminal when at a low level.

Thus, the first switch tube 1012, the second switch tube 1013 and thethird switch tube 1014 are controlled by a narrow pulse signal of 300ns; therefore, the conduction time of the first switch tube 1012, thesecond switch tube 1013 and the third switch tube 1014 can be shortenedand the power consumption is reduced.

After the HIN1 terminal signal passes through the first inputsub-circuit 1011, the first output terminal of the first inputsub-circuit 1011 outputs a 300 ns narrow pulse when the signal is at therising edge and the second output terminal of the first inputsub-circuit 1011 outputs a 300 ns narrow pulse when the signal is at thefalling edge. The narrow pulse controls each of the first switch tube1012 and the second switch tube 1013 to turn on 300 ns, and thus thefirst input terminal and the second input terminal of the latch andstep-down module 1016 respectively generate a low level of 300 ns. Thelatch and step-down module 1016 inside has an RS flip-flop or the likedevice, so that the two low level signals are re-integrated into acomplete signal which is in phase with the HIN1. When the upper bridgearm switch tube (the first upper bridge arm switch tube 121, the secondupper bridge arm switch tube 122 and the third upper bridge arm switchtube 123) and the lower bridge arm switch tube (the first lower bridgearm switch tube 124, the second lower bridge arm switch tube 125 and thethird lower bridge arm switch tube 126) include a GaN MOS tube (that is,the upper bridge arm switch tube and the lower bridge arm switch tubeeach are the GaN MOS mode in FIG. 2 , the combination mode of GaN MOSand Si FRD in FIG. 3 , or the combination mode of GaN MOS and GaN SBD inFIG. 4 ) and the control input terminal SS is connected with a highlevel, the third output terminal of the first input sub-circuit 1011generates a high-level pulse. Thus, the third switch tube 1014 is turnedon for 300 ns, the input terminal of the latch module 1015 generates alow level of 300 ns, the output terminal of the latch module 1015outputs a high level, and thus the positive terminal of the power supplyof the first output sub-circuit 1017 switches to be connected to theselection terminal 1 of the first switching module 1018, that is,connected to the first output terminal of the latch and step-down module1016. Thereby, the P-HO1 terminal and the N-HO1 terminal of the firstoutput sub-circuit 1017 respectively output 0V and 3V of high/low levelsignals.

When the upper bridge arm switch tube (the first upper bridge arm switchtube 121, the second upper bridge arm switch tube 122 and the thirdupper bridge arm switch tube 123) and the lower bridge arm switch tube(the first lower bridge arm switch tube 124, the second lower bridge armswitch tube 125 and the third lower bridge arm switch tube 126) do notinclude a GaN MOS tube (that is, the upper bridge arm switch tube andthe lower bridge arm switch tube each are the combination mode of SiIGBT and Si FRD in FIG. 5 , or the combination mode of Si IGBT and GaNSBD in FIG. 6 ) and the control input terminal SS is connected with alow level, the third output terminal of the first input sub-circuit 1011does not generate a high-level pulse. Thereby, the third switch tube1014 is turned off, the input terminal of the latch module 1015 does notgenerate a low level, the output terminal of the latch module 1015outputs a low level, and thus the positive terminal of the power supplyof the first output sub-circuit 1017 is kept connected to the selectionterminal 0 of the first switching module 1018 and connected to the VB1.Thus, the first output sub-circuit 1017 outputs 0V to 15V of high/lowlevel signal.

Referring to FIGS. 13 and 14 , the structures of the VH driving circuit102 and the WH driving circuit 103 are the same as the structure of theUH driving circuit 101, and description thereof is not repeated.

Referring to FIG. 15 , the UL/VL/WL driving circuit 104 inside includesa second input sub-circuit 1041, a second voltage output sub-circuit1049 and a step-down sub-circuit 1048. The second voltage outputsub-circuit 1049 is connected to the second input sub-circuit 1041 andthe step-down sub-circuit 1048. The second input sub-circuit 1041includes a first output terminal, a second output terminal, a thirdoutput terminal, and a fourth output terminal. The function of thesecond input sub-circuit 1041 is described as follows: the first outputterminal of the second input sub-circuit 1041 outputs a signal which isin phase with that of the first input terminal of the second inputsub-circuit 1041; the second output terminal of the second inputsub-circuit 1041 outputs a signal which is in phase with that of thesecond input terminal of the second input sub-circuit 1041; and thethird output terminal of the second input sub-circuit 1041 outputs asignal which is in phase with that of the third input terminal of thesecond input sub-circuit 1041. When the SS terminal of the second inputsub-circuit 1041 is at a high level, the fourth output terminal of thesecond input sub-circuit 1041 outputs a high level. When the SS terminalof the second input sub-circuit 1041 is at a low level, the fourthoutput terminal of the second input sub-circuit 1041 outputs a lowlevel.

The second voltage output sub-circuit 1049 includes a UL (first phaselower) output module 1042, a VL (second phase lower) output module 1043,a WL (third phase lower) output module 1044, a second switching module1045, a third switching module 1046, and a fourth switching module 1047.The UL output module 1042 is connected to the second switching module1045 and the first output terminal of the second input sub-circuit 1041.The VL output module 1043 is connected to the third switching module1046 and the second output terminal of the second input sub-circuit1041. The WL output module 1044 is connected to the fourth switchingmodule 1047 and the third output terminal of the second inputsub-circuit 1041. The control terminal of the second switching module1045, the control terminal of the third switching module 1046, and thecontrol terminal of the fourth switching module 1047 are each connectedto the fourth output terminal of the second input sub-circuit 1041.

The output terminal of the step-down sub-circuit 1048 is connected tothe selection terminal 1 of the second switching module 1045, theselection terminal 1 of the third switching module 1046, and theselection terminal 1 of the fourth switching module 1047. The P-LO1 andN-LO1 are respectively connected to emitters of PMOS and NMOS of the ULoutput module 1042, the P-LO2 and N-LO2 are respectively connected toemitters of PMOS and NMOS of the VL output module 1043, and the P-LO3and N-LO3 are respectively connected to emitters of PMOS and NMOS of theWL output module 1044.

The step-down sub-circuit 1048 can step down the power supply voltage(15V) to the first voltage range (0V to 3V). That is, the secondswitching module 1045, the third switching module 1046 and the fourthswitching module 1047 select the power supply voltage or the outputvoltage of the step-down sub-circuit 1048 as the output voltage of thesecond voltage output sub-circuit based on the fourth output terminal ofthe second input sub-circuit 1041. The step-down sub-circuit 1048 canoutput a voltage of 3V to GND at the output terminal of the step-downsub-circuit 1048. The UL output module 1042 can output a signal whosevoltage value is consistent with the positive terminal of its powersupply when at a high level, and the UL output module 1042 can output asignal whose voltage value is consistent with the negative terminal ofits power supply and whose phase is consistent with the LIN1 when at alow level. The VL output module 1043 can output a signal whose voltagevalue is consistent with the positive terminal of its power supply whenat a high level, and the VL output module 1043 can output a signal whosevoltage value is consistent with the negative terminal of its powersupply and whose phase is consistent with the LIN2 when at a low level.The WL output module 1044 can output a signal whose voltage value isconsistent with the positive terminal of its power supply when at a highlevel, and the WL output module 1044 can output a signal whose voltagevalue is consistent with the negative terminal of its power supply andwhose phase is consistent with the LIN3 when at a low level.

Among them, the VCC terminal is connected to the positive terminal ofthe power supply of the second input sub-circuit 1041, the positiveterminal of the power supply of the step-down sub-circuit 1048, theselection terminal 0 of the second switching module 1045 (such as ananalog switch), the selection terminal 0 of the third switching module1046 (such as an analog switch), and the selection terminal 0 of thefourth switching module 1047 (such as an analog switch). The LIN1terminal is connected to the first input terminal of the second inputsub-circuit 1041. The LIN2 terminal is connected to the second inputterminal of the second input sub-circuit 1041. The LIN3 terminal isconnected to the third input terminal of the second input sub-circuit1041. The control input terminal SS is connected to the control terminalof the second input sub-circuit 1041. The first output terminal of thesecond input sub-circuit 1041 is connected to the input terminal of theUL output module 1042. The second output terminal of the second inputsub-circuit 1041 is connected to the input terminal of the VL outputmodule 1043. The third output terminal of the second input sub-circuit1041 is connected to the input terminal of the VL output module 1043.

The GND is connected to the negative terminal of the power supply of thesecond input sub-circuit 1041, the negative terminal of the power supplyof the step-down sub-circuit 1048, the negative terminal of the powersupply of the UL output module 1042, the negative terminal of the powersupply of the VL output module 1043, and the negative terminal of thepower supply of the WL output module 1044.

The working principle of the UL/VL/WL driving circuit 104 is describedas follows: after signals of the LIN1 terminal, the LIN2 terminal andthe LIN3 terminal pass through the second input sub-circuit 1041, thefirst output terminal, the second output terminal and the third outputterminal of the second input sub-circuit 1041 respectively outputsignals which are in phase with that of the LIN1 terminal, the LIN2terminal and the LIN3 terminal, in which the signals are shaped into asquare wave.

When the control input terminal SS is at a high level, the first outputterminal, the second output terminal, the third output terminal and thefourth output terminal of the second input sub-circuit 1041 each outputtrigger pulses which are a high level, and the second voltage outputsub-circuit 1049 outputs a high/low level signal in the first voltagerange (0V-3V). When the control input terminal SS is at a low level, thefirst output terminal, the second output terminal and the third outputterminal of the second input sub-circuit 1041 each output trigger pulseswhich are a high level, the fourth output terminal of the second inputsub-circuit 1041 outputs a low level, and the second voltage outputsub-circuit 1049 outputs a high/low level signal in the second voltagerange (0V-15V).

For example, when the upper bridge arm switch tube (the first upperbridge arm switch tube 121, the second upper bridge arm switch tube 122and the third upper bridge arm switch tube 123) and the lower bridge armswitch tube (the first lower bridge arm switch tube 124, the secondlower bridge arm switch tube 125 and the third lower bridge arm switchtube 126) each include a GaN MOS tube (that is, the upper bridge armswitch tube and the lower bridge arm switch tube each are the GaN MOSmode in FIG. 2 , a combination mode of GaN MOS and Si FRD in FIG. 3 , ora combination mode of GaN MOS and GaN SBD in FIG. 4 ) and the controlinput terminal SS is connected with a high level, the fourth outputterminal of the second input sub-circuit 1041 outputs a high level. Afixed terminal of the second switching module 1045 is connected to theselection terminal 1 of the second switching module 1045. A fixedterminal of the third switching module 1046 is connected to theselection terminal 1 of the third switching module 1046. A fixedterminal of the fourth switching module 1047 is connected to theselection terminal 1 of the fourth switching module 1047. Thus, theP-LO1 and N-LO1 output 0V and 3V of signals that are in phase with theinput terminal of the UL output module 1042. The P-LO2 and N-LO2 output0V and 3V of signals that are in phase with the input terminal of the VLoutput module 1043. The P-LO3 and N-LO3 output 0V and 3V of signals thatare in phase with the input terminal of the WL output module 1044.

When the upper bridge arm switch tube (the first upper bridge arm switchtube 121, the second upper bridge arm switch tube 122 and the thirdupper bridge arm switch tube 123) and the lower bridge arm switch tube(the first lower bridge arm switch tube 124, the second lower bridge armswitch tube 125 and the third lower bridge arm switch tube 126) each donot include a GaN MOS tube (that is, the upper bridge arm switch tubeand the lower bridge arm switch tube each are a combination mode of SiIGBT and Si FRD in FIG. 5 , or a combination mode of Si IGBT and GaN SBDin FIG. 6 ) and the control input terminal SS is connected with a lowlevel, the fourth output terminal of the second input sub-circuit 1041outputs a low level. A fixed terminal of the second switching module1045 is connected to the selection terminal 0 of the second switchingmodule 1045. A fixed terminal of the third switching module 1046 isconnected to the selection terminal 0 of the third switching module1046. A fixed terminal of the fourth switching module 1047 is connectedto the selection terminal 0 of the fourth switching module 1047. Thus,the P-LO1 and N-LO1 output 0V and 15V of signals that are in phase withthe input terminal of the UL output module 1042. The P-LO2 and N-LO2output 0V and 15V of signals that are in phase with the input terminalof the VL output module 1043. The P-LO3 and N-LO3 output 0V and 15V ofsignals that are in phase with the input terminal of the WL outputmodule 1044.

Referring to FIGS. 1 and 16 , the present disclosure in certainembodiments also proposes an electrical appliance 1000. The electricalappliance 1000 includes the power device 100 described above and theprocessor 200. The processor 200 is connected to the power device 100.The electrical appliance 1000 may be an air conditioner (including ahousehold air conditioner, a commercial air conditioner), a washingmachine, a refrigerator, an induction cooker, or the like. The powerdevice 100 can implement the functions as described above.

The electrical appliance 1000 in certain embodiments of the presentdisclosure controls the control input terminal SS of the HVIC tube 111to be connected with a high level or a low level. When the control inputterminal SS is connected with a high level, the first driving circuit105 and the second driving circuit 106 output a high/low level signal ina first voltage range to ensure that the GaN device is fully turned onand the gate of GaN device is not broken down. When the control inputterminal SS is connected with a low level, the first driving circuit 105and the second driving circuit 106 output a high/low level signal in asecond voltage range different from the first voltage range to ensurethat the Si device is fully turned on. Thereby, the adaptability of theGaN intelligent power module and the Si intelligent power module isimproved, which ensures the functions of the GaN and Si intelligentpower modules to be executed. In addition, the power supply voltage ofthe power device 100 remains unchanged at 15V and the peripheral circuitdoes not need to be modified, thus the power consumption of the HVICtube 111 does not substantially increase. A same HVIC tube 111 drivesthe GaN device and the Si device; thus, there is no risk of mixing theHVIC tubes 111 during the production process, which facilitates materialorganization and reduces material costs.

Although the preferred embodiments of the present disclosure have beendescribed, those skilled in the art can make additional changes andmodifications to these embodiments once they learn the basic creativeconcept. Therefore, the appended claims are intended to be interpretedas including the preferred embodiments and all changes and modificationsfalling within the scope of the present disclosure.

Obviously, those skilled in the art can make various changes andmodifications to the present disclosure without departing from thespirit and scope of the present disclosure. Thus, if these modificationsand variations of the present disclosure fall within the scope of theclaims of the present disclosure and their equivalent technologies, thepresent disclosure is also intended to include these modifications andvariations.

What is claimed is:
 1. A power device comprising: a control inputterminal; an upper bridge arm switch tube and a lower bridge arm switchtube; an upper resistor group and a lower resistor group; a firstdriving circuit, connected to the control input terminal and the upperbridge arm switch tube through the upper resistor group; and a seconddriving circuit, connected to the control input terminal and the lowerbridge arm switch tube through the lower resistor group, wherein: thecontrol input terminal is connectable to a high level or a low level,when the control input terminal is connected to the high level, thefirst driving circuit and the second driving circuit output a high/lowlevel signal in a first voltage range, when the control input terminalis connected to the low level, the first driving circuit and the seconddriving circuit output a high/low level signal in a second voltagerange, and the first voltage range is different from the second voltagerange, and wherein: when the upper bridge arm switch tube and the lowerbridge arm switch tube each comprise a GaN device, a high level is inputto the control input terminal, and when the upper bridge arm switch tubeand the lower bridge arm switch tube each comprise a Si device, a lowlevel is input to the control input terminal.
 2. The power deviceaccording to claim 1, further comprising a GND terminal and a VCCterminal, wherein: when the control input terminal is connected to theGND terminal, the control input terminal is connected to the low level,and when the control input terminal is connected to the VCC terminal,the control input terminal is connected to the high level.
 3. The powerdevice according to claim 1, further comprising a controller, wherein:the control input terminal is connected to the controller, and thecontroller is configured to control the control input terminal to beconnected to the high level or the low level.
 4. The power deviceaccording to claim 1, wherein the first voltage range is in the range of0V to 3V and the second voltage range is in the range of 0V to 15V. 5.The power device according to claim 1, wherein: the first drivingcircuit comprises a first phase upper driving circuit, a second phaseupper driving circuit and a third phase upper driving circuit; thesecond driving circuit comprises a lower driving circuit; the upperbridge arm switch tube comprises a first upper bridge arm switch tube, asecond upper bridge arm switch tube and a third upper bridge arm switchtube; the lower bridge arm switch tube comprises a first lower bridgearm switch tube, a second lower bridge arm switch tube and a third lowerbridge arm switch tube; the upper resistor group comprises a first upperswitch resistor, a second upper switch resistor and a third upper switchresistor; and the lower resistor group comprises a first lower switchresistor, a second lower switch resistor and a third lower switchresistor, wherein: the control input terminal is connected to each ofthe first phase upper driving circuit, the second phase driving circuitand the third phase upper driving circuit, the first phase upper drivingcircuit is connected to and configured to drive the first upper bridgearm switch tube through the first upper switch resistor, the secondphase upper driving circuit is connected to and configured to drive thesecond upper bridge arm switch tube through the second upper switchresistor, and the third phase upper driving circuit is connected to andconfigured to drive the third upper bridge arm switch tube through thethird upper switch resistor, and wherein: the control input terminal isconnected to the lower driving circuit, the lower driving circuit isconnected to and configured to drive the first lower bridge arm switchtube through the first lower switch resistor, the lower driving circuitis connected to and configured to drive the second lower bridge armswitch tube through the second lower switch resistor, and the lowerdriving circuit is connected to and configured to drive the third lowerbridge arm switch tube through the third lower switch resistor.
 6. Thepower device according to claim 5, wherein the first phase upper drivingcircuit, the second phase upper driving circuit or the third phase upperdriving circuit comprises: a first input sub-circuit, connected to thecontrol input terminal and comprising a first output terminal, a secondoutput terminal and a third output terminal, wherein: when the controlinput terminal is connected to the low level, the first output terminaland the second output terminal output trigger pulses, and when thecontrol input terminal is connected to the high level, the first outputterminal, the second output terminal and the third output terminaloutput trigger pulses; a first switch tube, a second switch tube and athird switch tube, wherein: the first switch tube is connected to thefirst output terminal, when the first output terminal outputs a triggerpulse, the first switch tube is turned on, the second switch tube isconnected to the second output terminal, when the second output terminaloutputs a trigger pulse, the second switch tube is turned on, and thethird switch tube is connected to the third output terminal, when thethird output terminal outputs a trigger pulse, the third switch tube isturned on; and a first voltage output sub-circuit, connected to each ofthe first switch tube, the second switch tube and the third switch tube,wherein: the first voltage output sub-circuit outputs the high/low levelsignal in the second voltage range when the third switch tube is notturned on, and the first voltage output sub-circuit outputs the high/lowlevel signal in the first voltage range when the third switch tube isturned on.
 7. The power device according to claim 6, wherein the firstvoltage output sub-circuit comprises: a latch and step-down circuit,connected to the first switch tube and the second switch tube, a firstswitching module, connected to the latch and step-down circuit and apower supply respectively, and a latch circuit, connected to the thirdswitch tube, wherein: when the third switch tube is not turned on, thelatch circuit is configured to control an action of the first switchingmodule to take a voltage of the power supply as an output voltage of thefirst voltage output sub-circuit; and when the third switch tube isturned on, the latch circuit is configured to control an action of thefirst switching module to take an output voltage of the latch andstep-down circuit as an output voltage of the first voltage outputsub-circuit.
 8. The power device according to claim 5, wherein the lowerdriving circuit comprises: a second input sub-circuit, comprising afirst output terminal, a second output terminal, a third output terminaland a fourth output terminal, wherein: when the control input terminalis connected to the high level, the first output terminal, the secondoutput terminal, the third output terminal and the fourth outputterminal output trigger pulses, and when the control input terminal isconnected to the low level, the first output terminal, the second outputterminal and the third output terminal output trigger pulses; astep-down sub-circuit, configured to step-down a voltage of a powersupply to the first voltage range; and a second voltage outputsub-circuit, connected to the second input sub-circuit and the step-downsub-circuit, wherein: when the first output terminal, the second outputterminal, the third output terminal and the fourth output terminaloutput trigger pulses, the second voltage output sub-circuit outputs thehigh/low level signal in the first voltage range, and when the firstoutput terminal, the second output terminal and the third outputterminal output trigger pulses, the second voltage output sub-circuitoutputs the high/low level signal in the second voltage range.
 9. Thepower device according to claim 8, wherein the second voltage outputsub-circuit comprises: a first phase lower output module, a second phaselower output module and a third phase lower output module, respectivelyconnected to the first output terminal, the second output terminal andthe third output terminal of the second input sub-circuit, a secondswitching module, a third switching module and a fourth switchingmodule, respectively connected to the first phase lower output module,the second phase lower output module and the third phase lower outputmodule, wherein: the second switching module, the third switching moduleand the fourth switching module are configured to select the voltage ofthe power supply or an output voltage of the step-down sub-circuit as anoutput voltage of the second voltage output sub-circuit according to thefourth output terminal of the second input sub-circuit.
 10. Anelectrical appliance comprising: a power device and a processorconnected to the power device, wherein the power device comprises: acontrol input terminal; an upper bridge arm switch tube and a lowerbridge arm switch tube; an upper resistor group and a lower resistorgroup; a first driving circuit, connected to the control input terminaland connected to the upper bridge arm switch tube through the upperresistor group; and a second driving circuit, connected to the controlinput terminal and connected to the lower bridge arm switch tube throughthe lower resistor group, wherein: the control input terminal isconnectable to a high level or a low level, when the control inputterminal is connected to the high level, the first driving circuit andthe second driving circuit output a high/low level signal in a firstvoltage range, and when the control input terminal is connected to thelow level, the first driving circuit and the second driving circuitoutput a high/low level signal in a second voltage range, wherein thefirst voltage range is different from the second voltage range, andwherein: when the upper bridge arm switch tube and the lower bridge armswitch tube each comprise a GaN device, a high level is input to thecontrol input terminal, and when the upper bridge arm switch tube andthe lower bridge arm switch tube each comprise a Si device, a low levelis input to the control input terminal.
 11. The electrical applianceaccording to claim 10, wherein: the power device further comprises a GNDterminal and a VCC terminal, when the control input terminal isconnected to the GND terminal, the control input terminal is connectedto the low level, and when the control input terminal is connected tothe VCC terminal, the control input terminal is connected to the highlevel.
 12. The electrical appliance according to claim 10, wherein thepower device further comprises a controller, wherein: the control inputterminal is connected to the controller, and the controller isconfigured to control the control input terminal to be connected to thehigh level or the low level.
 13. The electrical appliance according toclaim 10, wherein the first voltage range is the range of 0V to 3V andthe second voltage range is the range of 0V to 15V.
 14. The electricalappliance according to claim 10, wherein: the first driving circuitcomprises a first phase upper driving circuit, a second phase upperdriving circuit and a third phase upper driving circuit; the seconddriving circuit comprises a lower driving circuit; the upper bridge armswitch tube comprises a first upper bridge arm switch tube, a secondupper bridge arm switch tube and a third upper bridge arm switch tube;the lower bridge arm switch tube comprises a first lower bridge armswitch tube, a second lower bridge arm switch tube and a third lowerbridge arm switch tube; the upper resistor group comprises a first upperswitch resistor, a second upper switch resistor and a third upper switchresistor; and the lower resistor group comprises a first lower switchresistor, a second lower switch resistor and a third lower switchresistor, wherein: the control input terminal is connected to each ofthe first phase upper driving circuit, the second phase upper drivingcircuit and the third phase upper driving circuit, the first phase upperdriving circuit is connected to and configured to drive the first upperbridge arm switch tube through the first upper switch resistor, thesecond phase upper driving circuit is connected to and configured todrive the second upper bridge arm switch tube through the second upperswitch resistor, and the third phase upper driving circuit is connectedto and configured to drive the third upper bridge arm switch tubethrough the third upper switch resistor, and wherein: the control inputterminal is connected to the lower driving circuit, the lower drivingcircuit is connected to and configured to drive the first lower bridgearm switch tube through the first lower switch resistor, the lowerdriving circuit is connected to and configured to drive the second lowerbridge arm switch tube through the second lower switch resistor, and thelower driving circuit is connected to and configured to drive the thirdlower bridge arm switch tube through the third lower switch resistor.15. The electrical appliance according to claim 14, wherein the firstphase upper driving circuit, the second phase upper driving circuit orthe third phase upper driving circuit comprises: a first inputsub-circuit, connected to the control input terminal and comprising afirst output terminal, a second output terminal and a third outputterminal, wherein: when the control input terminal is connected to thelow level, the first output terminal and the second output terminaloutput trigger pulses, and when the control input terminal is connectedto the high level, the first output terminal, the second output terminaland the third output terminal output trigger pulses; a first switchtube, a second switch tube and a third switch tube, wherein: the firstswitch tube is connected to the first output terminal, when the firstoutput terminal outputs a trigger pulse, the first switch tube is turnedon, the second switch tube is connected to the second output terminal,when the second output terminal outputs a trigger pulse, the secondswitch tube is turned on, and the third switch tube is connected to thethird output terminal, when the third output terminal outputs a triggerpulse, the third switch tube is turned on; and a first voltage outputsub-circuit, connected to each of the first switch tube, the secondswitch tube and the third switch tube, wherein: the first voltage outputsub-circuit outputs the high/low level signal in the second voltagerange when the third switch tube is not turned on, and the first voltageoutput sub-circuit outputs the high/low level signal in the firstvoltage range when the third switch tube is turned on.
 16. Theelectrical appliance according to claim 15, wherein the first voltageoutput sub-circuit comprises: a latch and step-down circuit, connectedto the first switch tube and the second switch tube, a first switchingmodule, connected to the latch and step-down circuit and a power supplyrespectively, and a latch circuit, connected to the third switch tube,wherein: when the third switch tube is not turned on, the latch circuitis configured to control an action of the first switching module to takea voltage of the power supply as an output voltage of the first voltageoutput sub-circuit; and when the third switch tube is turned on, thelatch circuit is configured to control an action of the first switchingmodule to take an output voltage of the latch and step-down circuit asan output voltage of the first voltage output sub-circuit.
 17. Theelectrical appliance according to claim 14, wherein the lower drivingcircuit comprises: a second input sub-circuit, comprising a first outputterminal, a second output terminal, a third output terminal and a fourthoutput terminal, wherein: when the control input terminal is connectedto the high level, the first output terminal, the second outputterminal, the third output terminal and the fourth output terminaloutput trigger pulses, and when the control input terminal is connectedto the low level, the first output terminal, the second output terminaland the third output terminal output trigger pulses; a step-downsub-circuit, configured to step-down a voltage of a power supply to thefirst voltage range; and a second voltage output sub-circuit, connectedto the second input sub-circuit and the step-down sub-circuit, wherein:when the first output terminal, the second output terminal, the thirdoutput terminal and the fourth output terminal output trigger pulses,the second voltage output sub-circuit outputs the high/low level signalin the first voltage range, and when the first output terminal, thesecond output terminal and the third output terminal output triggerpulses, the second voltage output sub-circuit outputs the high/low levelsignal in the second voltage range.
 18. The electrical applianceaccording to claim 17, wherein the second voltage output sub-circuitcomprises: a first phase lower output module, a second phase loweroutput module and a third phase lower output module, respectivelyconnected to the first output terminal, the second output terminal andthe third output terminal of the second input sub-circuit, and a secondswitching module, a third switching module and a fourth switchingmodule, respectively connected to the first phase lower output module,the second phase lower output module and the third phase lower outputmodule, wherein: the second switching module, the third switching moduleand the fourth switching module select the voltage of the power supplyor an output voltage of the step-down sub-circuit as an output voltageof the second voltage output sub-circuit according to the fourth outputterminal of the second input sub-circuit.